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Structural Analysis(si) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Sep 03, 2025～Sep 30, 2025
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Structural Analysis Product List

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Evaluation of semiconductor insulating films using STEM/EDS.

Evaluation of semiconductor insulating films using STEM/EDS.

STEM-EDS observation can confirm the shape and layer structure of the insulating film between semiconductor Poly-Si (polysilicon) and can be applied to investigate the causes of semiconductor defects.

In STEM (Scanning Transmission Electron Microscopy) and EDS (Energy Dispersive X-ray Spectroscopy), information regarding the composition of the sample (contrast images reflecting atomic numbers) can be obtained by scanning a finely focused electron beam over the sample. Additionally, the following features are available: - Observation of changes in diffraction contrast by varying the angle of incidence of the electron beam - Determination of whether the observation target is crystalline - Acquisition of information on crystal defects (dislocations, twins, etc.) within the crystal In this case, we introduce "Evaluation of Semiconductor Insulating Films using STEM-EDS." This case yielded no issues, but abnormal detection is also possible. Please take a moment to read the PDF materials. Furthermore, in addition to this STEM, our company excels in identifying defective areas by performing 3D reconstruction on specific regions of the sample in combination with FIB. We would be happy to provide a demonstration, so please feel free to reach out to us. Seiko Future Creation Official Website https://www.seiko-sfc.co.jp/ *Other materials are also available. If you request them through the inquiry button, we will send them to you.

  • Semiconductor inspection/test equipment
  • Contract Analysis
  • Other semiconductors

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[Analysis Case] Structural Analysis of Amorphous SiNx Films Using Molecular Dynamics Calculations

[Analysis Case] Structural Analysis of Amorphous SiNx Films Using Molecular Dynamics Calculations

Microscopic structural analysis of amorphous films is possible through simulation.

Amorphous SiNx (a-SiNx) films exhibit significant changes in physical properties from semiconductors to insulators due to compositional variations such as the N/Si ratio, making them suitable for a wide range of applications, including gate insulating films for transistors. On the other hand, experimental methods capable of atomic-level microscopic structural analysis for materials with non-crystalline amorphous structures are limited. Therefore, creating and analyzing amorphous structures with various compositions and densities through simulation becomes an effective tool. This document presents examples of structural analysis of a-SiNx films using molecular dynamics calculations.

  • Contract Analysis
  • Memory

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Infineon IGBT6 Structure Analysis and Process Analysis Report

Infineon IGBT6 Structure Analysis and Process Analysis Report

Analyzing products using Infineon's TRENCHSTOP(TM) technology!

We offer the "Infineon IGBT6 (IKQ75N120CS6XKSA1) Structural Analysis Report and Process Analysis Report." This report includes a comparison of the characteristics of IGBT4 (HighSpeed3), IGBT5, and IGBT6. Please feel free to contact us if you have any requests. 【Report Contents】 ■ Structural Analysis Report - Package appearance, X-ray observation, package cross-section analysis, chip structure analysis, EDX material analysis - Electrical characteristic measurements (breakdown voltage, IC-VCE, capacitance characteristics) - Comparison of characteristics with HighSpeed3 IGBT and IGBT5 ■ Process Analysis Report - Manufacturing process flow and device characteristic analysis report based on structural analysis results *For more details, please download the PDF or feel free to contact us.

  • Other services

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Technical Information Magazine 201901-02 Nanometer Scale Local Structure Analysis

Technical Information Magazine 201901-02 Nanometer Scale Local Structure Analysis

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** Spectroscopic analysis techniques utilizing near-field light localized at the tips of metal chips are highly anticipated methods for analyzing chemical structures in the nanometer range. Techniques such as tip-enhanced Raman spectroscopy and near-field Raman spectroscopy are representative methods, and various studies have been conducted on their principles and applications. This paper presents examples of their application in material analysis and discusses their practicality for material characterization. **Table of Contents** 1. Introduction 2. Crystal structure analysis of CNTs using TERS 3. Stress analysis at the SiO2/SiC interface using SNOM-Raman 4. Conclusion

  • Contract Analysis
  • Contract measurement
  • Technical and Reference Books

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Report: Detailed Structural Analysis of Application Processor Logic

Report: Detailed Structural Analysis of Application Processor Logic

This is a detailed structural analysis of the Mediatek MT6592 octa-core (8-core).

This report is a detailed structural analysis of the Mediatek MT6592 octa-core (8-core) application processor. The MT6592 features an ARM Cortex-A7 processor and is marketed as a "true octa-core" SoC, equipped with a 4-core ARM MaliTM GPU, supporting Full HD displays, cameras up to 16 million pixels, multi-mode cellular modems, and dual-band 802.11n Wi-Fi, among other features. The MT6592 is manufactured using TSMC's HPM CMOS process with an 8-layer metal (7 Cu, 1 Al) structure, high-k metal gate (HKMG), and a gate length of 28nm. 【Features】 ○ Crystal orientation of the transistor channel <110> ○ Hafnium oxide (HfO2) material for the gate insulating film ○ Dual work function metal gate ○ nMOS (NiSi) and pMOS (NiSiGe) source/drain regions, and low-k interlayer insulating film For more details, please contact us or download the catalog.

  • Analysis Services

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FEM stress structural analysis

FEM stress structural analysis

We are utilizing cutting-edge systems such as 3D robot simulation and FEM stress structural analysis to improve productivity and quality.

We use HYPER MESH for FEM analysis modeling. A wide range of engineers, from skilled professionals to young talent, provide stable quality and the latest technology. You can rely on us for everything from design to simulation, analysis, and robot teaching.

  • Other industrial robots
  • Assembly Machine
  • simulator

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Business Information: Process Analysis

Business Information: Process Analysis

Research on key innovative process technologies, optimization of manufacturing costs, and improvement of yield!

The process helps determine the cost, quality, and performance of devices, and often compensates for design flaws. TechInsights employs 10 process experts and provides the collective expertise accumulated over more than 140 years in device structure analysis. Devices include but are not limited to CMOS, bipolar, BiCMOS, GaAs, SiGe, copper, low-k dielectrics, SOI, strained silicon, MEMS, and TFT. Using data collected through TechInsights' specialized technology, we provide information on the structure, material composition, critical dimensions, and manufacturing processes of your products or competing products in the form of process analysis reports. 【Example Issues Addressed】 - How to embed memory (flash, DRAM, SRAM, FeRAM) into logic devices - How to mitigate risks when transitioning to more advanced process generations - What transistor performance major competing products have - How RF devices are integrated into CMOS For more details, please contact us or download the catalog.

  • Patents

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Structural analysis of Adesto RM24EP128KS CBRAM

Structural analysis of Adesto RM24EP128KS CBRAM

Structural analysis of Adesto RM24EP128KS CBRAM

Adesto provides a technology that serves as an alternative to power-efficient, cost-effective flash memory, achieving long battery life for connected home devices such as home appliances, sensors, and monitors. CBRAM is seen as a promising successor to flash memory, offering cost and power savings. Adesto's CBRAM excels in energy efficiency, is CMOS compatible, and is designed for discrete and embedded memory applications. TechInsights' structural analysis report includes detailed layer-by-layer (LbL) analysis of the device structure, manufacturing processes, and compositions, as well as critical dimension measurements of general features, gate lengths and pitches, channel lengths, diffusion layer depths, well depths, field oxide thicknesses, and gate oxide thicknesses.

  • Other electronic parts

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Report: Detailed Structural Analysis of the MDM9235 Modem Logic

Report: Detailed Structural Analysis of the MDM9235 Modem Logic

Detailed structural analysis of the 20 nm HKMG Qualcomm Gobi.

This report is a detailed structural analysis (LDSA) of the 20 nm node Qualcomm MDM9235 modem. The MDM9235 is the fourth generation Qualcomm Gobi 9x35 series modem and is the first modem from Qualcomm manufactured using a 20 nm CMOS process. The MDM9235 is paired with the Qualcomm Snapdragon 805 application processor to support 4G LTE-A Cat. 6 data rates (301.5 Mbps) and 4K video content. The MDM9235 is manufactured by TSMC using 10 layers of metallization (9-Cu, 1-Al), with 20 nm node high-k metal gate (HKMG) transistors fabricated on a bulk silicon substrate using a gate length process. It features a minimum contacted gate pitch of 90 nm. 【Features】 ○ Understanding of key design and manufacturing innovations ○ Informed technical resource investment decisions based on appropriate information For more details, please contact us or download the catalog.

  • Analysis Services

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[Analysis Case] Evaluation of Crystal Structure by Micro XRD Analysis

[Analysis Case] Evaluation of Crystal Structure by Micro XRD Analysis

XRD measurements in micro areas are possible.

We will introduce a case where XRD measurements were conducted by narrowing the X-ray beam to Φ400μm, allowing us to obtain crystal information targeting a specific area rather than the entire surface. In the XRD measurement results of the printed circuit board sample, Cu and BaSO4 were detected at all measurement points (1) to (3), and a peak from Au was detected at the measurement point (1), which is the electrode. This aligns well with the results from XRF measurements. Thus, it is possible to identify crystal structures by targeting regions of several hundred micrometers with different compositions and crystallinities. Measurement methods: XRD, XRF Product fields: LSI, memory, electronic components Analysis purposes: Composition evaluation, identification, structural evaluation For more details, please download the materials or contact us.

  • Contract Analysis

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Panasonic ReRAM 8-bit microcontroller structural analysis

Panasonic ReRAM 8-bit microcontroller structural analysis

Panasonic ReRAM-equipped MN101LR05D 8-bit microcontroller

The MN101LR05D is a low-power 8-bit single-chip microcontroller developed for portable healthcare, security devices, and sensor processing. The MN101LR05D features a CPU core with a 10MHz 8-bit AM13L, 64KB of ReRAM capacity, and 4KB of SRAM capacity. The MR101LR05D is the world's first mass-produced practical example of ReRAM (Resistive RAM), and it is expected to be widely utilized as a successor technology to existing non-volatile memory. The MN101LR05D is manufactured using a 180nm CMOS process with four layers of AI metallization. The ReRAM cell of this metal oxide is formed between stack W vias connecting metal 3 to metal 4. The results of the report are based on data from scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy-dispersive X-ray analysis (TEM-EDS), electron energy loss spectroscopy (TEM-EEKS), and spreading resistance measurement (SRP).

  • Other electronic parts

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Analysis of crystal grains below 30nm using the EBSD method.

Analysis of crystal grains below 30nm using the EBSD method.

EBSD: Electron Backscatter Diffraction

By conducting EBSD analysis on thinned samples, higher spatial resolution can be achieved compared to conventional bulk samples.

  • Contract Analysis

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Extreme point measurement

Extreme point measurement

XRD: X-ray diffraction method

Pole figure measurement is a method that focuses on specific crystal planes and evaluates the distribution of crystal orientations by directing X-rays from various directions onto the sample. The detector is fixed at the diffraction angle (2θ) of the crystal plane of interest, and the two parameters, α (the tilt angle of the sample) and β (the in-plane rotation angle of the sample), are varied to measure crystal planes tilted in all directions. This indicates that the crystal orientations are concentrated in the directions where high diffraction intensity is observed. Additionally, the measurement results are represented in a pole figure as shown in the diagram at the bottom right.

  • Contract Analysis

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